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Interplay of the disorder and strain in gallium oxide
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga(2)O(3)) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interpla...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9470558/ https://www.ncbi.nlm.nih.gov/pubmed/36100627 http://dx.doi.org/10.1038/s41598-022-19191-8 |