Selective Electron Beam Patterning of Oxygen‐Doped WSe(2) for Seamless Lateral Junction Transistors

Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field‐effect transistors (FETs). However, patternability of SCTD is a key challenge to effectively switch FETs. Herein,...

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Detalles Bibliográficos
Autores principales: Ngo, Tien Dat, Choi, Min Sup, Lee, Myeongjin, Ali, Fida, Hassan, Yasir, Ali, Nasir, Liu, Song, Lee, Changgu, Hone, James, Yoo, Won Jong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9475546/
https://www.ncbi.nlm.nih.gov/pubmed/35853245
http://dx.doi.org/10.1002/advs.202202465

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9475546/
https://www.ncbi.nlm.nih.gov/pubmed/35853245
http://dx.doi.org/10.1002/advs.202202465

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