Reduced dopant-induced scattering in remote charge-transfer-doped MoS(2) field-effect transistors

Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically invol...

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Detalles Bibliográficos
Autores principales: Jang, Juntae, Kim, Jae-Keun, Shin, Jiwon, Kim, Jaeyoung, Baek, Kyeong-Yoon, Park, Jaehyoung, Park, Seungmin, Kim, Young Duck, Parkin, Stuart S. P., Kang, Keehoon, Cho, Kyungjune, Lee, Takhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9491718/
https://www.ncbi.nlm.nih.gov/pubmed/36129985
http://dx.doi.org/10.1126/sciadv.abn3181

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9491718/
https://www.ncbi.nlm.nih.gov/pubmed/36129985
http://dx.doi.org/10.1126/sciadv.abn3181

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