Bottom-up plasma-enhanced atomic layer deposition of SiO(2) by utilizing growth inhibition using NH(3) plasma pre-treatment for seamless gap-fill process

The design-rule shrinkage in semiconductor devices is a challenge at every step of the integration process. In the gap-fill process for isolation, the seam and void formation cannot be suppressed by using a deposition process, which even has excellent step coverage. To achieve seamless gap fill in t...

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Detalles Bibliográficos
Autores principales: Choi, Yoenju, Kim, Taehoon, Lee, Hangyul, Park, Jusung, Park, Juhwan, Ryu, Dongho, Jeon, Woojin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9492731/
https://www.ncbi.nlm.nih.gov/pubmed/36131082
http://dx.doi.org/10.1038/s41598-022-20201-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9492731/
https://www.ncbi.nlm.nih.gov/pubmed/36131082
http://dx.doi.org/10.1038/s41598-022-20201-y

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