Oxidation Resistance Improvement of Graphene-Oxide-Semiconductor Planar-Type Electron Sources Using h-BN as an Oxygen-Resistant, Electron-Transmissive Coating

[Image: see text] Graphene–oxide–semiconductor (GOS) planar-type electron emission devices with a hexagonal boron nitride (h-BN) protective layer have demonstrated improved oxidation resistance while maintaining their emission performance. The devices with a monolayer or a multilayer (13 nm in thick...

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Detalles Bibliográficos
Autores principales: Matsumoto, Naoyuki, Takao, Yoshinori, Nagao, Masayoshi, Murakami, Katsuhisa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9494642/
https://www.ncbi.nlm.nih.gov/pubmed/36157737
http://dx.doi.org/10.1021/acsomega.2c02709

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9494642/
https://www.ncbi.nlm.nih.gov/pubmed/36157737
http://dx.doi.org/10.1021/acsomega.2c02709

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