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Oxidation Resistance Improvement of Graphene-Oxide-Semiconductor Planar-Type Electron Sources Using h-BN as an Oxygen-Resistant, Electron-Transmissive Coating
[Image: see text] Graphene–oxide–semiconductor (GOS) planar-type electron emission devices with a hexagonal boron nitride (h-BN) protective layer have demonstrated improved oxidation resistance while maintaining their emission performance. The devices with a monolayer or a multilayer (13 nm in thick...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9494642/ https://www.ncbi.nlm.nih.gov/pubmed/36157737 http://dx.doi.org/10.1021/acsomega.2c02709 |