Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

A systematic study of the most significant parameters of the ion-assisted deposited silicon dioxide films is carried out using the classical molecular dynamics method. The energy of the deposited silicon and oxygen atoms corresponds to the thermal evaporation of the target; the energy of the assisti...

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Detalles Bibliográficos
Autores principales: Grigoriev, F. V., Sulimov, V. B., Tikhonravov, A. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500739/
https://www.ncbi.nlm.nih.gov/pubmed/36145030
http://dx.doi.org/10.3390/nano12183242

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500739/
https://www.ncbi.nlm.nih.gov/pubmed/36145030
http://dx.doi.org/10.3390/nano12183242

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