Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are sy...

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Detalles Bibliográficos
Autores principales: Koryakin, Alexander A., Kukushkin, Sergey A., Osipov, Andrey V., Sharofidinov, Shukrillo Sh., Shcheglov, Mikhail P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500810/
https://www.ncbi.nlm.nih.gov/pubmed/36143511
http://dx.doi.org/10.3390/ma15186202

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500810/
https://www.ncbi.nlm.nih.gov/pubmed/36143511
http://dx.doi.org/10.3390/ma15186202

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