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Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are sy...

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Autores principales: Koryakin, Alexander A., Kukushkin, Sergey A., Osipov, Andrey V., Sharofidinov, Shukrillo Sh., Shcheglov, Mikhail P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500810/
https://www.ncbi.nlm.nih.gov/pubmed/36143511
http://dx.doi.org/10.3390/ma15186202
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author Koryakin, Alexander A.
Kukushkin, Sergey A.
Osipov, Andrey V.
Sharofidinov, Shukrillo Sh.
Shcheglov, Mikhail P.
author_facet Koryakin, Alexander A.
Kukushkin, Sergey A.
Osipov, Andrey V.
Sharofidinov, Shukrillo Sh.
Shcheglov, Mikhail P.
author_sort Koryakin, Alexander A.
collection PubMed
description In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC([Formula: see text]) facets. The SiC(111)/([Formula: see text]) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN([Formula: see text])||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN([Formula: see text]) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.
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spelling pubmed-95008102022-09-24 Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates Koryakin, Alexander A. Kukushkin, Sergey A. Osipov, Andrey V. Sharofidinov, Shukrillo Sh. Shcheglov, Mikhail P. Materials (Basel) Article In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC([Formula: see text]) facets. The SiC(111)/([Formula: see text]) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN([Formula: see text])||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN([Formula: see text]) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented. MDPI 2022-09-06 /pmc/articles/PMC9500810/ /pubmed/36143511 http://dx.doi.org/10.3390/ma15186202 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Koryakin, Alexander A.
Kukushkin, Sergey A.
Osipov, Andrey V.
Sharofidinov, Shukrillo Sh.
Shcheglov, Mikhail P.
Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
title Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
title_full Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
title_fullStr Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
title_full_unstemmed Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
title_short Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
title_sort growth mechanism of semipolar aln layers by hvpe on hybrid sic/si(110) substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500810/
https://www.ncbi.nlm.nih.gov/pubmed/36143511
http://dx.doi.org/10.3390/ma15186202
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