Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers

In this paper, we demonstrate a device using a Ni/SiN/BN/p(+)-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p(+)-Si and Ni/BN/p(+)-Si devices. Its switching mechanism can be explained by t...

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Detalles Bibliográficos
Autores principales: Khan, Sobia Ali, Hussain, Fayyaz, Chung, Daewon, Rahmani, Mehr Khalid, Ismail, Muhammd, Mahata, Chandreswar, Abbas, Yawar, Abbas, Haider, Choi, Changhwan, Mikhaylov, Alexey N., Shchanikov, Sergey A., Yang, Byung-Do, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500867/
https://www.ncbi.nlm.nih.gov/pubmed/36144121
http://dx.doi.org/10.3390/mi13091498

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500867/
https://www.ncbi.nlm.nih.gov/pubmed/36144121
http://dx.doi.org/10.3390/mi13091498

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