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Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers
In this paper, we demonstrate a device using a Ni/SiN/BN/p(+)-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p(+)-Si and Ni/BN/p(+)-Si devices. Its switching mechanism can be explained by t...
| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9500867/ https://www.ncbi.nlm.nih.gov/pubmed/36144121 http://dx.doi.org/10.3390/mi13091498 |