Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with...

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Detalles Bibliográficos
Autores principales: Hwang, Yu-Jin, Kim, Do-Kyung, Jeon, Sang-Hwa, Wang, Ziyuan, Park, Jaehoon, Lee, Sin-Hyung, Jang, Jaewon, Kang, In Man, Bae, Jin-Hyuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9502405/
https://www.ncbi.nlm.nih.gov/pubmed/36144885
http://dx.doi.org/10.3390/nano12183097

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9502405/
https://www.ncbi.nlm.nih.gov/pubmed/36144885
http://dx.doi.org/10.3390/nano12183097

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