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Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology
In this work, we propose a vertical gate-all-around device architecture (GAA-FinFET) with the aim of simultaneously improving device performance as well as addressing the short channel effect (SCE). The GAA-FinFET was built using the technology computer-aided design (TCAD) simulation tool, and then,...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9502989/ https://www.ncbi.nlm.nih.gov/pubmed/36144174 http://dx.doi.org/10.3390/mi13091551 |