Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices

The combined effect of total ionization dose (TID) and time-dependent dielectric breakdown (TDDB) of partially depleted silicon-on-insulator (PDSOI) NMOSFET is investigated. First, the effect of TDDB on the parameter degradation of the devices was investigated by accelerated stress tests. It is foun...

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Detalles Bibliográficos
Autores principales: Yang, Jianye, Liu, Hongxia, Yang, Kun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503320/
https://www.ncbi.nlm.nih.gov/pubmed/36144057
http://dx.doi.org/10.3390/mi13091432

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503320/
https://www.ncbi.nlm.nih.gov/pubmed/36144057
http://dx.doi.org/10.3390/mi13091432

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