Cargando…

Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices

The combined effect of total ionization dose (TID) and time-dependent dielectric breakdown (TDDB) of partially depleted silicon-on-insulator (PDSOI) NMOSFET is investigated. First, the effect of TDDB on the parameter degradation of the devices was investigated by accelerated stress tests. It is foun...

Descripción completa

Detalles Bibliográficos
Autores principales:	Yang, Jianye, Liu, Hongxia, Yang, Kun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503320/ https://www.ncbi.nlm.nih.gov/pubmed/36144057 http://dx.doi.org/10.3390/mi13091432

Ejemplares similares

An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices
por: Lu, Yong, et al.
Publicado: (2023)

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET
por: Yang, Yafang, et al.
Publicado: (2022)

Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress
por: Gao, Tianzhi, et al.
Publicado: (2023)

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs
por: Jia, Yupeng, et al.
Publicado: (2023)

Dielectric breakdown of solids
por: Whitehead, Stanley
Publicado: (1951)

Ionization avalanches and breakdown
por: Llewellyn-Jones, F
Publicado: (1967)

Ionization and breakdown in gases
por: Llewellyn-Jones, F
Publicado: (1957)

Total Ionizing Dose Effect in LDMOS Oxides and Devices
por: Borel, T, et al.
Publicado: (2019)

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices
por: Wu, Hao, et al.
Publicado: (2023)

Nanopore Fabrication by Controlled Dielectric Breakdown
por: Kwok, Harold, et al.
Publicado: (2014)

Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models
por: Wong, Terence K.S.
Publicado: (2012)

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET
por: Chong, Chen, et al.
Publicado: (2021)

Ionization waves in electrical breakdown of gases
por: Lagarkov, A N, et al.
Publicado: (1994)

Dielectric breakdown of 2D muscovite mica
por: Maruvada, Anirudh, et al.
Publicado: (2022)

Investigation of the Dynamic Breakdown of a Dielectric Elastomer Actuator Under Cyclic Voltage Excitation
por: Liu, Xuejing, et al.
Publicado: (2021)

Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit
por: Gao, Tianzhi, et al.
Publicado: (2023)

Time- and dose-dependent effects of total-body ionizing radiation on muscle stem cells
por: Masuda, Shinya, et al.
Publicado: (2015)

Prevention of Dielectric Breakdown of Nanopore Membranes by Charge Neutralization
por: Matsui, Kazuma, et al.
Publicado: (2015)

Study of ionizing particle induced breakdown in liquid argon
por: Riegler, A
Publicado: (1969)

Quantitative Evaluation of Dielectric Breakdown of Silicon Micro- and Nanofluidic Devices for Electrophoretic Transport of a Single DNA Molecule
por: Sano, Mamiko, et al.
Publicado: (2018)

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
por: Zhang, Chun-Min, et al.
Publicado: (2019)

10th International Conference on Conduction and Breakdown in Dielectric Liquids
por: Collective
Publicado: (1990)

10th International Conference on Conduction and Breakdown in Dielectric Liquids
Publicado: (1990)

Electrode Impact on the Electrical Breakdown of Dielectric Elastomer Thin Films
por: Fasolt, Bettina, et al.
Publicado: (2023)

Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS
por: Hsieh, Wen-Ching, et al.
Publicado: (2016)

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
por: Chang, Sung-Jae, et al.
Publicado: (2020)

Dielectric Breakdown and Post-Breakdown Dissolution of Si/SiO(2) Cathodes in Acidic Aqueous Electrochemical Environment
por: Yun, Jeongse, et al.
Publicado: (2018)

Degradation and Dose-Rate Dependence in Decananometer MOSFETs Exposed to Ultra-High Levels of Total Ionizing Dose
por: Costanzo, Sebastiano
Publicado: (2019)

Ultrashort pulse laser ablation of dielectrics: Thresholds, mechanisms, role of breakdown
por: Mirza, Inam, et al.
Publicado: (2016)

Aqueous ionic effect on electrochemical breakdown of Si-dielectric–electrolyte interface
por: Yun, Jeongse, et al.
Publicado: (2020)

Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS
por: Chevas, Loukas, et al.
Publicado: (2018)

A Bilayer High-Temperature Dielectric Film with Superior Breakdown Strength and Energy Storage Density
por: Ping, Jiang-Bo, et al.
Publicado: (2023)

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem
por: Yang, Lihong, et al.
Publicado: (2023)

ABC130 Total Ionizing Dose Irradiation Campaign
por: QUIRK, Nicholas Patrick
Publicado: (2015)

Total Ionizing Dose Effects in a Xilinx FPGA
por: Buchanan, N J, et al.
Publicado: (1999)

Interface modified BTO@PS-co-mah/PS composite dielectrics with enhanced breakdown strength and ultralow dielectric loss
por: Liu, Xuepeng, et al.
Publicado: (2023)

Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface
por: Helling, Cole Michael, et al.
Publicado: (2018)

Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface
por: Affolder, Tony, et al.
Publicado: (2018)

Temperature Effects on the Dielectric Properties and Breakdown Performance of h-BN/Epoxy Composites
por: Tang, Yongzhe, et al.
Publicado: (2019)

Phase-field modeling and machine learning of electric-thermal-mechanical breakdown of polymer-based dielectrics
por: Shen, Zhong-Hui, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_udnopcki11etlgpubl3nu7ie8l