Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering

Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an Al sputtering target and N(2) as the reactive gas. The N(2) working...

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Detalles Bibliográficos
Autores principales: Liu, Wei-Sheng, Gururajan, Balaji, Wu, Sui-Hua, Huang, Li-Cheng, Chi, Chung-Kai, Jiang, Yu-Lun, Kuo, Hsing-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503465/
https://www.ncbi.nlm.nih.gov/pubmed/36144169
http://dx.doi.org/10.3390/mi13091546

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9503465/
https://www.ncbi.nlm.nih.gov/pubmed/36144169
http://dx.doi.org/10.3390/mi13091546

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