Evolution Application of Two-Dimensional MoS(2)-Based Field-Effect Transistors

High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS(2) has recently shown a special two-dimensional (2D) structure and...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Chunlan, Song, Yongle, Huang, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504544/
https://www.ncbi.nlm.nih.gov/pubmed/36145022
http://dx.doi.org/10.3390/nano12183233

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504544/
https://www.ncbi.nlm.nih.gov/pubmed/36145022
http://dx.doi.org/10.3390/nano12183233

Ejemplares similares