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Evolution Application of Two-Dimensional MoS(2)-Based Field-Effect Transistors
High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS(2) has recently shown a special two-dimensional (2D) structure and...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504544/ https://www.ncbi.nlm.nih.gov/pubmed/36145022 http://dx.doi.org/10.3390/nano12183233 |