A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect

A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in HJ-LTFET to enhance the ON-state current (I(ON)). Owing to the quas...

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Detalles Bibliográficos
Autores principales: Ma, Boyang, Chen, Shupeng, Wang, Shulong, Han, Tao, Zhang, Hao, Yin, Chenyu, Chen, Yaolin, Liu, Hongxia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504750/
https://www.ncbi.nlm.nih.gov/pubmed/36144097
http://dx.doi.org/10.3390/mi13091474

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504750/
https://www.ncbi.nlm.nih.gov/pubmed/36144097
http://dx.doi.org/10.3390/mi13091474

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