Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show...

Descripción completa

Detalles Bibliográficos
Autores principales: Kumar, Ajay, Gupta, Neha, Goyal, Amit Kumar, Massoud, Yehia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504859/
https://www.ncbi.nlm.nih.gov/pubmed/36144042
http://dx.doi.org/10.3390/mi13091418

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9504859/
https://www.ncbi.nlm.nih.gov/pubmed/36144042
http://dx.doi.org/10.3390/mi13091418

Ejemplares similares