Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric

In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH(3) flow during the deposition of SiNx can significantly affect the performances of metal–insulator–semicondu...

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Detalles Bibliográficos
Autores principales: Gao, Xiaohui, Guo, Hui, Wang, Rui, Pan, Danfeng, Chen, Peng, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505048/
https://www.ncbi.nlm.nih.gov/pubmed/36144019
http://dx.doi.org/10.3390/mi13091396

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505048/
https://www.ncbi.nlm.nih.gov/pubmed/36144019
http://dx.doi.org/10.3390/mi13091396

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