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Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric
In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH(3) flow during the deposition of SiNx can significantly affect the performances of metal–insulator–semicondu...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505048/ https://www.ncbi.nlm.nih.gov/pubmed/36144019 http://dx.doi.org/10.3390/mi13091396 |