Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with gate length less than 0.5 μm using nanocrysta...

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Detalles Bibliográficos
Autores principales: Guo, Huaixin, Li, Yizhuang, Yu, Xinxin, Zhou, Jianjun, Kong, Yuechan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505530/
https://www.ncbi.nlm.nih.gov/pubmed/36144109
http://dx.doi.org/10.3390/mi13091486

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505530/
https://www.ncbi.nlm.nih.gov/pubmed/36144109
http://dx.doi.org/10.3390/mi13091486

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