Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO(2)/Al(2)O(3)-Based Charge Trapping Layers

Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) str...

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Detalles Bibliográficos
Autores principales: Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Wozniak, Wojciech, Stanchev, Todor, Ivanov, Tsvetan, Wojewoda-Budka, Joanna, Janusz-Skuza, Marta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505722/
https://www.ncbi.nlm.nih.gov/pubmed/36143596
http://dx.doi.org/10.3390/ma15186285

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505722/
https://www.ncbi.nlm.nih.gov/pubmed/36143596
http://dx.doi.org/10.3390/ma15186285

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