Thermal Expansion of 3C-SiC Obtained from In-Situ X-ray Diffraction at High Temperature and First-Principal Calculations

In situ X-ray crystallography powder diffraction studies on beta silicon carbide (3C-SiC) in the temperature range 25–800 °C at the maximum peak (111) are reported. At 25 °C, it was found that the lattice parameter is 4.596 Å, and coefficient thermal expansion (CTE) is 2.4 × [Formula: see text] /°C....

Descripción completa

Detalles Bibliográficos
Autores principales: Sultan, N. M., Albarody, Thar M. Badri, Al-Jothery, Husam Kareem Mohsin, Abdullah, Monis Abdulmanan, Mohammed, Haetham G., Obodo, Kingsley Onyebuchi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505936/
https://www.ncbi.nlm.nih.gov/pubmed/36143540
http://dx.doi.org/10.3390/ma15186229

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9505936/
https://www.ncbi.nlm.nih.gov/pubmed/36143540
http://dx.doi.org/10.3390/ma15186229

Ejemplares similares