An Oxygen Vacancy Memristor Ruled by Electron Correlations

Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox‐driven oxygen exchange in tunnel junctions based on NdNiO(3), a strongly c...

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Detalles Bibliográficos
Autores principales: Humbert, Vincent, El Hage, Ralph, Krieger, Guillaume, Sanchez‐Santolino, Gabriel, Sander, Anke, Collin, Sophie, Trastoy, Juan, Briatico, Javier, Santamaria, Jacobo, Preziosi, Daniele, Villegas, Javier E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507366/
https://www.ncbi.nlm.nih.gov/pubmed/35901494
http://dx.doi.org/10.1002/advs.202201753

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507366/
https://www.ncbi.nlm.nih.gov/pubmed/35901494
http://dx.doi.org/10.1002/advs.202201753

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