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An Oxygen Vacancy Memristor Ruled by Electron Correlations
Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox‐driven oxygen exchange in tunnel junctions based on NdNiO(3), a strongly c...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507366/ https://www.ncbi.nlm.nih.gov/pubmed/35901494 http://dx.doi.org/10.1002/advs.202201753 |
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author | Humbert, Vincent El Hage, Ralph Krieger, Guillaume Sanchez‐Santolino, Gabriel Sander, Anke Collin, Sophie Trastoy, Juan Briatico, Javier Santamaria, Jacobo Preziosi, Daniele Villegas, Javier E. |
author_facet | Humbert, Vincent El Hage, Ralph Krieger, Guillaume Sanchez‐Santolino, Gabriel Sander, Anke Collin, Sophie Trastoy, Juan Briatico, Javier Santamaria, Jacobo Preziosi, Daniele Villegas, Javier E. |
author_sort | Humbert, Vincent |
collection | PubMed |
description | Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox‐driven oxygen exchange in tunnel junctions based on NdNiO(3), a strongly correlated electron system characterized by the presence of a metal‐to‐insulator transition (MIT). Strikingly, a strong interplay exists between the MIT and the redox mechanism, which on the one hand modifies the MIT itself, and on the other hand radically affects the tunnel resistance switching and the resistance states' lifetime. That results in a very unique temperature behavior and endows the junctions with multiple degrees of freedom. The obtained results bring up fundamental questions on the interplay between electronic correlations and the creation and mobility of oxygen vacancies in nickelates, opening a new avenue toward mimicking neuromorphic functions by exploiting the electric‐field control of correlated states. |
format | Online Article Text |
id | pubmed-9507366 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-95073662022-09-30 An Oxygen Vacancy Memristor Ruled by Electron Correlations Humbert, Vincent El Hage, Ralph Krieger, Guillaume Sanchez‐Santolino, Gabriel Sander, Anke Collin, Sophie Trastoy, Juan Briatico, Javier Santamaria, Jacobo Preziosi, Daniele Villegas, Javier E. Adv Sci (Weinh) Research Articles Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox‐driven oxygen exchange in tunnel junctions based on NdNiO(3), a strongly correlated electron system characterized by the presence of a metal‐to‐insulator transition (MIT). Strikingly, a strong interplay exists between the MIT and the redox mechanism, which on the one hand modifies the MIT itself, and on the other hand radically affects the tunnel resistance switching and the resistance states' lifetime. That results in a very unique temperature behavior and endows the junctions with multiple degrees of freedom. The obtained results bring up fundamental questions on the interplay between electronic correlations and the creation and mobility of oxygen vacancies in nickelates, opening a new avenue toward mimicking neuromorphic functions by exploiting the electric‐field control of correlated states. John Wiley and Sons Inc. 2022-07-28 /pmc/articles/PMC9507366/ /pubmed/35901494 http://dx.doi.org/10.1002/advs.202201753 Text en © 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Humbert, Vincent El Hage, Ralph Krieger, Guillaume Sanchez‐Santolino, Gabriel Sander, Anke Collin, Sophie Trastoy, Juan Briatico, Javier Santamaria, Jacobo Preziosi, Daniele Villegas, Javier E. An Oxygen Vacancy Memristor Ruled by Electron Correlations |
title | An Oxygen Vacancy Memristor Ruled by Electron Correlations |
title_full | An Oxygen Vacancy Memristor Ruled by Electron Correlations |
title_fullStr | An Oxygen Vacancy Memristor Ruled by Electron Correlations |
title_full_unstemmed | An Oxygen Vacancy Memristor Ruled by Electron Correlations |
title_short | An Oxygen Vacancy Memristor Ruled by Electron Correlations |
title_sort | oxygen vacancy memristor ruled by electron correlations |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507366/ https://www.ncbi.nlm.nih.gov/pubmed/35901494 http://dx.doi.org/10.1002/advs.202201753 |
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