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An Oxygen Vacancy Memristor Ruled by Electron Correlations
Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox‐driven oxygen exchange in tunnel junctions based on NdNiO(3), a strongly c...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507366/ https://www.ncbi.nlm.nih.gov/pubmed/35901494 http://dx.doi.org/10.1002/advs.202201753 |