Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor

The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet region,...

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Detalles Bibliográficos
Autores principales: Hong, Xitong, Huang, Yulong, Tian, Qianlei, Zhang, Sen, Liu, Chang, Wang, Liming, Zhang, Kai, Sun, Jia, Liao, Lei, Zou, Xuming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507368/
https://www.ncbi.nlm.nih.gov/pubmed/35869612
http://dx.doi.org/10.1002/advs.202202019

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9507368/
https://www.ncbi.nlm.nih.gov/pubmed/35869612
http://dx.doi.org/10.1002/advs.202202019

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