Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor

The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet region, which is an insurmountable obstacle for construction of NVS in practical applications. Herein, an ultrasensitive visual sensor with phototransistor architecture consisting of AlGaN/GaN high‐electron‐mobility‐transistor (HEMT) and two‐dimensional Ruddlesden–Popper organic–inorganic halide perovskite (2D OIHP) is reported. Utilizing the significant variation in activation energy for ion transport in 2D OIHP (from 1.3 eV under dark to 0.4 eV under illumination), the sensor can efficiently perceive and storage optical information in ultraviolet–visible region. Meanwhile, the photo‐enhanced field‐effect mechanism in the depletion‐mode HEMT enables gate‐tunable negative and positive photoresponse, where some typical optoelectronic synaptic functions including inhibitory and excitatory postsynaptic current as well as paired‐pulse facilitation are demonstrated. More importantly, a NVS based on the proposed visual sensor array is constructed for achieving neuromorphic visual preprocessing with an improved color image recognition rate of 100%.