Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO(2) ferroelectric junctionless TFET biosensors

In this work, we propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO(2) ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor. The proposed sensing device employs a dual inverted-T cavity and uses ferroelectric gate stacking of...

Descripción completa

Detalles Bibliográficos
Autores principales: Singh, Sangeeta, Singh, Shradhya, Mohammed, Mustafa K. A., Kishor Jha, Kamal, Loan, Sajad A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9511230/
https://www.ncbi.nlm.nih.gov/pubmed/36276049
http://dx.doi.org/10.1039/d2ra03118c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9511230/
https://www.ncbi.nlm.nih.gov/pubmed/36276049
http://dx.doi.org/10.1039/d2ra03118c

Ejemplares similares