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Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO(2) ferroelectric junctionless TFET biosensors

In this work, we propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO(2) ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor. The proposed sensing device employs a dual inverted-T cavity and uses ferroelectric gate stacking of...

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Detalles Bibliográficos
Autores principales:	Singh, Sangeeta, Singh, Shradhya, Mohammed, Mustafa K. A., Kishor Jha, Kamal, Loan, Sajad A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9511230/ https://www.ncbi.nlm.nih.gov/pubmed/36276049 http://dx.doi.org/10.1039/d2ra03118c

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