Cargando…

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO(2) ferroelectric junctionless TFET biosensors

In this work, we propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO(2) ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor. The proposed sensing device employs a dual inverted-T cavity and uses ferroelectric gate stacking of...

Descripción completa

Detalles Bibliográficos
Autores principales:	Singh, Sangeeta, Singh, Shradhya, Mohammed, Mustafa K. A., Kishor Jha, Kamal, Loan, Sajad A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9511230/ https://www.ncbi.nlm.nih.gov/pubmed/36276049 http://dx.doi.org/10.1039/d2ra03118c

Ejemplares similares

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
por: Cao, Ronggen, et al.
Publicado: (2014)

Expanding the Set of Three-Input Logic Functions in Inverted T-Shaped TFETs
por: Ye, Hao, et al.
Publicado: (2023)

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application
por: Kumar, Parveen, et al.
Publicado: (2022)

Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET
por: Chong, Chen, et al.
Publicado: (2023)

Nanowire gate all around-TFET-based biosensor by considering ambipolar transport
por: Reddy, N. Nagendra, et al.
Publicado: (2021)

Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors
por: Biswas, Arpita, et al.
Publicado: (2021)

Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor
por: Chong, Chen, et al.
Publicado: (2021)

Detection of SARS-CoV-2 using dielectric modulated TFET-based biosensor
por: Wangkheirakpam, Vandana Devi, et al.
Publicado: (2022)

Performance Assessment of a Junctionless Heterostructure Tunnel FET Biosensor Using Dual Material Gate
por: Xie, Haiwu, et al.
Publicado: (2023)

Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor
por: Peesa, Rohit Bhargav, et al.
Publicado: (2021)

Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions
por: Shukla, Rajendra P., et al.
Publicado: (2022)

Gate-all-around junctionless FET based label-free dielectric/charge modulation detection of SARS-CoV-2 virus
por: Priyadarshani, Kumari Nibha, et al.
Publicado: (2022)

Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage
por: Kuo, Po-Yi, et al.
Publicado: (2019)

Junctionless field-effect transistors: design, modeling and simulation
por: Sahay, Shubham, et al.
Publicado: (2019)

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design
por: Paul, Robi
Publicado: (2022)

Tunnel field-effect transistors (TFET): modelling and simulation
por: Mamidala, Jagadesh Kumar, et al.
Publicado: (2016)

Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study
por: Dewan, Basudha, et al.
Publicado: (2021)

Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction
por: Cherik, Iman Chahardah, et al.
Publicado: (2023)

Modeling nanowire and double-gate junctionless field-effect transistors
por: Jazaeri, Farzan, et al.
Publicado: (2018)

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity
por: Reddy, N. Nagendra, et al.
Publicado: (2020)

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET
por: Chong, Chen, et al.
Publicado: (2021)

Valley-engineered ultra-thin silicon for high-performance junctionless transistors
por: Kim, Seung-Yoon, et al.
Publicado: (2016)

Tunable Microwave Filters Using HfO(2)-Based Ferroelectrics
por: Aldrigo, Martino, et al.
Publicado: (2020)

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET
por: Li, Wei, et al.
Publicado: (2017)

Limitation dans les cavitiés hf
por: Leroy, D
Publicado: (1971)

Ferroelectric-Antiferroelectric Transition of Hf(1–x)Zr(x)O(2) on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf(0.2)Zr(0.8)O(2)
por: Dahlberg, Hannes, et al.
Publicado: (2022)

Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors
por: Larki, Farhad, et al.
Publicado: (2014)

Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
por: Cheng, Ya-Chi, et al.
Publicado: (2014)

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO(2) film
por: Shimizu, Takao, et al.
Publicado: (2016)

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
por: Choi, Woo Young, et al.
Publicado: (2016)

F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
por: Yun, Seunghyun, et al.
Publicado: (2019)

Circuit Simulation Considering Electrical Coupling in Monolithic 3D Logics with Junctionless FETs
por: Ahn, Tae Jun, et al.
Publicado: (2020)

Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
por: Dou, Wei, et al.
Publicado: (2019)

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO(2) Films
por: Jang, Chan-Hee, et al.
Publicado: (2022)

Oxygen scavenging of HfZrO(2)-based capacitors for improving ferroelectric properties
por: Kim, Bong Ho, et al.
Publicado: (2022)

THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO(2)
por: Abdulazhanov, Sukhrob, et al.
Publicado: (2022)

A Ferroelectric Fast Reactive Tuner for Superconducting Cavities
por: Shipman, Nicholas, et al.
Publicado: (2019)

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
por: Chen, Shupeng, et al.
Publicado: (2020)

A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
por: Su, Chun-Jung, et al.
Publicado: (2012)

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
por: Peng, Bin, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_dforq5fcv1tu0uiekj0ca95gl7