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Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors

Chemical vapor deposition (CVD) through sulfidation of MoO(3) is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS(2). Recently, H(2)S precursor is being used in the CVD technique to synthesize 2D MoS(2). Although several studies have been...

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Autores principales: Arafat, Abdullah, Islam, Md. Sherajul, Ferdous, Naim, Islam, A. S. M. Jannatul, Sarkar, Md. Mosarof Hossain, Stampfl, Catherine, Park, Jeongwon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515180/
https://www.ncbi.nlm.nih.gov/pubmed/36167969
http://dx.doi.org/10.1038/s41598-022-20531-x
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author Arafat, Abdullah
Islam, Md. Sherajul
Ferdous, Naim
Islam, A. S. M. Jannatul
Sarkar, Md. Mosarof Hossain
Stampfl, Catherine
Park, Jeongwon
author_facet Arafat, Abdullah
Islam, Md. Sherajul
Ferdous, Naim
Islam, A. S. M. Jannatul
Sarkar, Md. Mosarof Hossain
Stampfl, Catherine
Park, Jeongwon
author_sort Arafat, Abdullah
collection PubMed
description Chemical vapor deposition (CVD) through sulfidation of MoO(3) is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS(2). Recently, H(2)S precursor is being used in the CVD technique to synthesize 2D MoS(2). Although several studies have been carried out to examine the mechanism of MoS(2) growth in the presence of sulfur and MoO(3) precursors, the growth of MoS(2) in the presence of H(2)S precursor has largely remained unknown. In this study, we present a Reactive molecular dynamics (RMD) simulation to investigate the reaction mechanism of MoS(2) from MoO(3) and H(2)S precursors. The intermediate molecules formation, the reason behind those formations, and the surface compositions of MoO(x)S(y)H(z) during the initial steps of CVD have all been quantified. Surprisingly, a sudden separation of sulfur atoms from the surface was observed in the H(2)S precursor system due to the substantial oxygen evolution after 1660 K. The sulfur detachments and oxygen evolution from the surface were found to have a linear relationship. In addition, the intermediate molecules and surface bonds of MoS(2) synthesized by MoO(3) and H(2)S precursors were compared to those of a system using S(2) and MoO(3) precursors. The most stable subsidiary formation from the H(2)S precursor was found to be H(2)O, whereas in case of S(2) precursor it was SO. These results provide a valuable insight in the formation of large-scale and high-quality 2D MoS(2) by the CVD technique.
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spelling pubmed-95151802022-09-29 Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors Arafat, Abdullah Islam, Md. Sherajul Ferdous, Naim Islam, A. S. M. Jannatul Sarkar, Md. Mosarof Hossain Stampfl, Catherine Park, Jeongwon Sci Rep Article Chemical vapor deposition (CVD) through sulfidation of MoO(3) is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS(2). Recently, H(2)S precursor is being used in the CVD technique to synthesize 2D MoS(2). Although several studies have been carried out to examine the mechanism of MoS(2) growth in the presence of sulfur and MoO(3) precursors, the growth of MoS(2) in the presence of H(2)S precursor has largely remained unknown. In this study, we present a Reactive molecular dynamics (RMD) simulation to investigate the reaction mechanism of MoS(2) from MoO(3) and H(2)S precursors. The intermediate molecules formation, the reason behind those formations, and the surface compositions of MoO(x)S(y)H(z) during the initial steps of CVD have all been quantified. Surprisingly, a sudden separation of sulfur atoms from the surface was observed in the H(2)S precursor system due to the substantial oxygen evolution after 1660 K. The sulfur detachments and oxygen evolution from the surface were found to have a linear relationship. In addition, the intermediate molecules and surface bonds of MoS(2) synthesized by MoO(3) and H(2)S precursors were compared to those of a system using S(2) and MoO(3) precursors. The most stable subsidiary formation from the H(2)S precursor was found to be H(2)O, whereas in case of S(2) precursor it was SO. These results provide a valuable insight in the formation of large-scale and high-quality 2D MoS(2) by the CVD technique. Nature Publishing Group UK 2022-09-27 /pmc/articles/PMC9515180/ /pubmed/36167969 http://dx.doi.org/10.1038/s41598-022-20531-x Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Arafat, Abdullah
Islam, Md. Sherajul
Ferdous, Naim
Islam, A. S. M. Jannatul
Sarkar, Md. Mosarof Hossain
Stampfl, Catherine
Park, Jeongwon
Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors
title Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors
title_full Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors
title_fullStr Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors
title_full_unstemmed Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors
title_short Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors
title_sort atomistic reaction mechanism of cvd grown mos(2) through moo(3) and h(2)s precursors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515180/
https://www.ncbi.nlm.nih.gov/pubmed/36167969
http://dx.doi.org/10.1038/s41598-022-20531-x
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