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Atomistic reaction mechanism of CVD grown MoS(2) through MoO(3) and H(2)S precursors

Chemical vapor deposition (CVD) through sulfidation of MoO(3) is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS(2). Recently, H(2)S precursor is being used in the CVD technique to synthesize 2D MoS(2). Although several studies have been...

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Detalles Bibliográficos
Autores principales:	Arafat, Abdullah, Islam, Md. Sherajul, Ferdous, Naim, Islam, A. S. M. Jannatul, Sarkar, Md. Mosarof Hossain, Stampfl, Catherine, Park, Jeongwon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515180/ https://www.ncbi.nlm.nih.gov/pubmed/36167969 http://dx.doi.org/10.1038/s41598-022-20531-x

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