Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

HIGHLIGHTS: A stable laminated Al(2)O(3)/HfO(2) insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al(2)O(3)/HfO(2) insul...

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Detalles Bibliográficos
Autores principales: Shi, Qiuwei, Aziz, Izzat, Ciou, Jin-Hao, Wang, Jiangxin, Gao, Dace, Xiong, Jiaqing, Lee, Pooi See
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515270/
https://www.ncbi.nlm.nih.gov/pubmed/36165917
http://dx.doi.org/10.1007/s40820-022-00929-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515270/
https://www.ncbi.nlm.nih.gov/pubmed/36165917
http://dx.doi.org/10.1007/s40820-022-00929-y

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