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Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

HIGHLIGHTS: A stable laminated Al(2)O(3)/HfO(2) insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al(2)O(3)/HfO(2) insul...

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Autores principales: Shi, Qiuwei, Aziz, Izzat, Ciou, Jin-Hao, Wang, Jiangxin, Gao, Dace, Xiong, Jiaqing, Lee, Pooi See
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515270/
https://www.ncbi.nlm.nih.gov/pubmed/36165917
http://dx.doi.org/10.1007/s40820-022-00929-y
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author Shi, Qiuwei
Aziz, Izzat
Ciou, Jin-Hao
Wang, Jiangxin
Gao, Dace
Xiong, Jiaqing
Lee, Pooi See
author_facet Shi, Qiuwei
Aziz, Izzat
Ciou, Jin-Hao
Wang, Jiangxin
Gao, Dace
Xiong, Jiaqing
Lee, Pooi See
author_sort Shi, Qiuwei
collection PubMed
description HIGHLIGHTS: A stable laminated Al(2)O(3)/HfO(2) insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al(2)O(3)/HfO(2) insulator. The flexible TFTs present the carrier mobilities of 9.7 cm(2) V(−1) s(−1), ON/OFF ratio of ~ 1.3 × 10(6), subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec(−1). ABSTRACT: Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al(2)O(3)/HfO(2) insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In(0.37)Ga(0.20)Zn(0.18)O(0.25) is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al(2)O(3)/HfO(2) nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al(2)O(3), crystallized HfO(2), and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm(2) V(−1) s(−1), ON/OFF ratio of ~ 1.3 × 10(6), subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec(−1), signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-00929-y.
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spelling pubmed-95152702022-09-29 Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors Shi, Qiuwei Aziz, Izzat Ciou, Jin-Hao Wang, Jiangxin Gao, Dace Xiong, Jiaqing Lee, Pooi See Nanomicro Lett Article HIGHLIGHTS: A stable laminated Al(2)O(3)/HfO(2) insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al(2)O(3)/HfO(2) insulator. The flexible TFTs present the carrier mobilities of 9.7 cm(2) V(−1) s(−1), ON/OFF ratio of ~ 1.3 × 10(6), subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec(−1). ABSTRACT: Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al(2)O(3)/HfO(2) insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In(0.37)Ga(0.20)Zn(0.18)O(0.25) is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al(2)O(3)/HfO(2) nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al(2)O(3), crystallized HfO(2), and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm(2) V(−1) s(−1), ON/OFF ratio of ~ 1.3 × 10(6), subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec(−1), signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-00929-y. Springer Nature Singapore 2022-09-27 /pmc/articles/PMC9515270/ /pubmed/36165917 http://dx.doi.org/10.1007/s40820-022-00929-y Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Shi, Qiuwei
Aziz, Izzat
Ciou, Jin-Hao
Wang, Jiangxin
Gao, Dace
Xiong, Jiaqing
Lee, Pooi See
Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
title Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
title_full Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
title_fullStr Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
title_full_unstemmed Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
title_short Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
title_sort al(2)o(3)/hfo(2) nanolaminate dielectric boosting igzo-based flexible thin-film transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515270/
https://www.ncbi.nlm.nih.gov/pubmed/36165917
http://dx.doi.org/10.1007/s40820-022-00929-y
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