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Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
HIGHLIGHTS: A stable laminated Al(2)O(3)/HfO(2) insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al(2)O(3)/HfO(2) insul...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Nature Singapore
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9515270/ https://www.ncbi.nlm.nih.gov/pubmed/36165917 http://dx.doi.org/10.1007/s40820-022-00929-y |