Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

[Image: see text] We demonstrate the fabrication of field-effect transistors based on single-layer MoS(2) and a thin layer of BaTiO(3) (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering ce...

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Detalles Bibliográficos
Autores principales: Puebla, Sergio, Pucher, Thomas, Rouco, Victor, Sanchez-Santolino, Gabriel, Xie, Yong, Zamora, Victor, Cuellar, Fabian A., Mompean, Federico J., Leon, Carlos, Island, Joshua O., Garcia-Hernandez, Mar, Santamaria, Jacobo, Munuera, Carmen, Castellanos-Gomez, Andres
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9523702/
https://www.ncbi.nlm.nih.gov/pubmed/36108061
http://dx.doi.org/10.1021/acs.nanolett.2c02395

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9523702/
https://www.ncbi.nlm.nih.gov/pubmed/36108061
http://dx.doi.org/10.1021/acs.nanolett.2c02395

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