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Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors
[Image: see text] We demonstrate the fabrication of field-effect transistors based on single-layer MoS(2) and a thin layer of BaTiO(3) (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering ce...
Autores principales: | Puebla, Sergio, Pucher, Thomas, Rouco, Victor, Sanchez-Santolino, Gabriel, Xie, Yong, Zamora, Victor, Cuellar, Fabian A., Mompean, Federico J., Leon, Carlos, Island, Joshua O., Garcia-Hernandez, Mar, Santamaria, Jacobo, Munuera, Carmen, Castellanos-Gomez, Andres |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9523702/ https://www.ncbi.nlm.nih.gov/pubmed/36108061 http://dx.doi.org/10.1021/acs.nanolett.2c02395 |
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