Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

[Image: see text] Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to...

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Detalles Bibliográficos
Autores principales: Vogel, Tobias, Zintler, Alexander, Kaiser, Nico, Guillaume, Nicolas, Lefèvre, Gauthier, Lederer, Maximilian, Serra, Anna Lisa, Piros, Eszter, Kim, Taewook, Schreyer, Philipp, Winkler, Robert, Nasiou, Déspina, Olivo, Ricardo Revello, Ali, Tarek, Lehninger, David, Arzumanov, Alexey, Charpin-Nicolle, Christelle, Bourgeois, Guillaume, Grenouillet, Laurent, Cyrille, Marie-Claire, Navarro, Gabriele, Seidel, Konrad, Kämpfe, Thomas, Petzold, Stefan, Trautmann, Christina, Molina-Luna, Leopoldo, Alff, Lambert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9527794/
https://www.ncbi.nlm.nih.gov/pubmed/36113861
http://dx.doi.org/10.1021/acsnano.2c04841

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9527794/
https://www.ncbi.nlm.nih.gov/pubmed/36113861
http://dx.doi.org/10.1021/acsnano.2c04841

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