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X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to rela...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9533754/ https://www.ncbi.nlm.nih.gov/pubmed/36249506 http://dx.doi.org/10.1107/S1600576722007142 |