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X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions

X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to rela...

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Detalles Bibliográficos
Autores principales: Tanner, Brian K., Danilewsky, Andreas, McNally, Patrick J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9533754/
https://www.ncbi.nlm.nih.gov/pubmed/36249506
http://dx.doi.org/10.1107/S1600576722007142
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author Tanner, Brian K.
Danilewsky, Andreas
McNally, Patrick J.
author_facet Tanner, Brian K.
Danilewsky, Andreas
McNally, Patrick J.
author_sort Tanner, Brian K.
collection PubMed
description X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to relax systematically as the polymer became viscous due to the temperature rise associated with the dissipation of heat in the transistor. The direct image size and intensity from the individual transistors were interpreted in terms of a model in which local thermal expansion is treated as a cylindrical inclusion of distorted material, contrast arising principally from lattice tilt. The extension of the thermal strain image along the emitter with increasing power dissipation was ascribed to the effect of current crowding in the emitter region. Weaker large-area contrast associated with the base–collector region was interpreted as arising from the smaller change in effective misorientation at the high X-ray energy of thermal lattice dilation in the base region.
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spelling pubmed-95337542022-10-13 X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions Tanner, Brian K. Danilewsky, Andreas McNally, Patrick J. J Appl Crystallogr Research Papers X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to relax systematically as the polymer became viscous due to the temperature rise associated with the dissipation of heat in the transistor. The direct image size and intensity from the individual transistors were interpreted in terms of a model in which local thermal expansion is treated as a cylindrical inclusion of distorted material, contrast arising principally from lattice tilt. The extension of the thermal strain image along the emitter with increasing power dissipation was ascribed to the effect of current crowding in the emitter region. Weaker large-area contrast associated with the base–collector region was interpreted as arising from the smaller change in effective misorientation at the high X-ray energy of thermal lattice dilation in the base region. International Union of Crystallography 2022-08-30 /pmc/articles/PMC9533754/ /pubmed/36249506 http://dx.doi.org/10.1107/S1600576722007142 Text en © Brian Tanner et al. 2022 https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.
spellingShingle Research Papers
Tanner, Brian K.
Danilewsky, Andreas
McNally, Patrick J.
X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
title X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
title_full X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
title_fullStr X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
title_full_unstemmed X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
title_short X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
title_sort x-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
topic Research Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9533754/
https://www.ncbi.nlm.nih.gov/pubmed/36249506
http://dx.doi.org/10.1107/S1600576722007142
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