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X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions
X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to rela...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
International Union of Crystallography
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9533754/ https://www.ncbi.nlm.nih.gov/pubmed/36249506 http://dx.doi.org/10.1107/S1600576722007142 |
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author | Tanner, Brian K. Danilewsky, Andreas McNally, Patrick J. |
author_facet | Tanner, Brian K. Danilewsky, Andreas McNally, Patrick J. |
author_sort | Tanner, Brian K. |
collection | PubMed |
description | X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to relax systematically as the polymer became viscous due to the temperature rise associated with the dissipation of heat in the transistor. The direct image size and intensity from the individual transistors were interpreted in terms of a model in which local thermal expansion is treated as a cylindrical inclusion of distorted material, contrast arising principally from lattice tilt. The extension of the thermal strain image along the emitter with increasing power dissipation was ascribed to the effect of current crowding in the emitter region. Weaker large-area contrast associated with the base–collector region was interpreted as arising from the smaller change in effective misorientation at the high X-ray energy of thermal lattice dilation in the base region. |
format | Online Article Text |
id | pubmed-9533754 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | International Union of Crystallography |
record_format | MEDLINE/PubMed |
spelling | pubmed-95337542022-10-13 X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions Tanner, Brian K. Danilewsky, Andreas McNally, Patrick J. J Appl Crystallogr Research Papers X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. Die warpage associated with the packaging was observed to relax systematically as the polymer became viscous due to the temperature rise associated with the dissipation of heat in the transistor. The direct image size and intensity from the individual transistors were interpreted in terms of a model in which local thermal expansion is treated as a cylindrical inclusion of distorted material, contrast arising principally from lattice tilt. The extension of the thermal strain image along the emitter with increasing power dissipation was ascribed to the effect of current crowding in the emitter region. Weaker large-area contrast associated with the base–collector region was interpreted as arising from the smaller change in effective misorientation at the high X-ray energy of thermal lattice dilation in the base region. International Union of Crystallography 2022-08-30 /pmc/articles/PMC9533754/ /pubmed/36249506 http://dx.doi.org/10.1107/S1600576722007142 Text en © Brian Tanner et al. 2022 https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited. |
spellingShingle | Research Papers Tanner, Brian K. Danilewsky, Andreas McNally, Patrick J. X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
title | X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
title_full | X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
title_fullStr | X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
title_full_unstemmed | X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
title_short | X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
title_sort | x-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions |
topic | Research Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9533754/ https://www.ncbi.nlm.nih.gov/pubmed/36249506 http://dx.doi.org/10.1107/S1600576722007142 |
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