Improved remnant polarization of Zr-doped HfO(2) ferroelectric film by CF(4)/O(2) plasma passivation

In this work, the impact of fluorine (CF(4)) and oxygen (O(2)) plasma passivation on HfZrO(x) (HZO) based ferroelectric capacitor was investigated. By the fluorine passivation, the surface trap density and oxygen vacancies in the HZO-based Metal–ferroelectric–insulator–semiconductor (MFIS) capacitor...

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Detalles Bibliográficos
Autores principales: Choi, Yejoo, Park, Hyeonjung, Han, Changwoo, Min, Jinhong, Shin, Changhwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9537174/
https://www.ncbi.nlm.nih.gov/pubmed/36202954
http://dx.doi.org/10.1038/s41598-022-21263-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9537174/
https://www.ncbi.nlm.nih.gov/pubmed/36202954
http://dx.doi.org/10.1038/s41598-022-21263-8

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