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Improved remnant polarization of Zr-doped HfO(2) ferroelectric film by CF(4)/O(2) plasma passivation
In this work, the impact of fluorine (CF(4)) and oxygen (O(2)) plasma passivation on HfZrO(x) (HZO) based ferroelectric capacitor was investigated. By the fluorine passivation, the surface trap density and oxygen vacancies in the HZO-based Metal–ferroelectric–insulator–semiconductor (MFIS) capacitor...
Autores principales: | Choi, Yejoo, Park, Hyeonjung, Han, Changwoo, Min, Jinhong, Shin, Changhwan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9537174/ https://www.ncbi.nlm.nih.gov/pubmed/36202954 http://dx.doi.org/10.1038/s41598-022-21263-8 |
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