InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied recently as the next-generation display technology. It is desired that µLEDs exhibit high stability and efficiency, submicron pixel size, and potential monolithic integration with Si-based complementary metal-oxide-...

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Detalles Bibliográficos
Autores principales: Wu, Yuanpeng, Xiao, Yixin, Navid, Ishtiaque, Sun, Kai, Malhotra, Yakshita, Wang, Ping, Wang, Ding, Xu, Yuanxiang, Pandey, Ayush, Reddeppa, Maddaka, Shin, Walter, Liu, Jiangnan, Min, Jungwook, Mi, Zetian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9550839/
https://www.ncbi.nlm.nih.gov/pubmed/36216825
http://dx.doi.org/10.1038/s41377-022-00985-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9550839/
https://www.ncbi.nlm.nih.gov/pubmed/36216825
http://dx.doi.org/10.1038/s41377-022-00985-4

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