Cargando…

InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied recently as the next-generation display technology. It is desired that µLEDs exhibit high stability and efficiency, submicron pixel size, and potential monolithic integration with Si-based complementary metal-oxide-...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wu, Yuanpeng, Xiao, Yixin, Navid, Ishtiaque, Sun, Kai, Malhotra, Yakshita, Wang, Ping, Wang, Ding, Xu, Yuanxiang, Pandey, Ayush, Reddeppa, Maddaka, Shin, Walter, Liu, Jiangnan, Min, Jungwook, Mi, Zetian
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9550839/ https://www.ncbi.nlm.nih.gov/pubmed/36216825 http://dx.doi.org/10.1038/s41377-022-00985-4

Ejemplares similares

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
por: Zhao, Xiaoyu, et al.
Publicado: (2021)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates
por: Bai, J., et al.
Publicado: (2019)

Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN
por: Gong, Y., et al.
Publicado: (2019)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
por: Nguyen, Hieu Pham Trung, et al.
Publicado: (2015)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr(3) Green Quantum Dots
por: Oh, Jae-Hyeok, et al.
Publicado: (2023)

A novel wavelength-adjusting method in InGaN-based light-emitting diodes
por: Deng, Zhen, et al.
Publicado: (2013)

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si
por: He, Junlei, et al.
Publicado: (2018)

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors
por: Kim, Tae Kyoung, et al.
Publicado: (2022)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
por: Dvoretckaia, Liliia, et al.
Publicado: (2022)

Flexible and monolithically integrated multicolor light emitting diodes using morphology-controlled GaN microstructures grown on graphene films
por: Lee, Keundong, et al.
Publicado: (2020)

CORRIGENDUM: A novel wavelength-adjusting method in InGaN-based light-emitting diodes
por: Deng, Zhen, et al.
Publicado: (2014)

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range
por: Jiang, Yang, et al.
Publicado: (2015)

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology
por: Li, Ying-Chang, et al.
Publicado: (2017)

Temperature Dependence of Electron Leakage Current in InGaN Blue Light-Emitting Diode Structures
por: Onwukaeme, Chibuzo, et al.
Publicado: (2022)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
por: Shon, Jeong Woo, et al.
Publicado: (2014)

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes
por: Wang, Lai, et al.
Publicado: (2017)

Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes
por: Tsai, Chia-Lung, et al.
Publicado: (2014)

In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes
por: Cui, Siyuan, et al.
Publicado: (2022)

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
por: Jung, Byung Oh, et al.
Publicado: (2016)

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation
por: Islam, Abu Bashar Mohammad Hamidul, et al.
Publicado: (2018)

Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture
por: Zhang, Yiping, et al.
Publicado: (2021)

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
por: Kochetkov, Fedor M., et al.
Publicado: (2021)

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
por: Bui, Ha Quoc Thang, et al.
Publicado: (2019)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel
por: Baek, Seung-Hye, et al.
Publicado: (2019)

Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes
por: Lee, Chang-Cheng, et al.
Publicado: (2022)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes
por: Nami, Mohsen, et al.
Publicado: (2018)

Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
por: Lee, Moonsang, et al.
Publicado: (2019)

Investigation on the corrosive effect of NH(3) during InGaN/GaN multi-quantum well growth in light emitting diodes
por: Yang, J., et al.
Publicado: (2017)

Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
por: Casu, Claudia, et al.
Publicado: (2022)

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution
por: Yang, Haifeng, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_crhgk8dj9nlpg07e9l53v2hvje