Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III–V devices on Si at elevated temperatu...

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Detalles Bibliográficos
Autores principales: Shang, Chen, Feng, Kaiyin, Hughes, Eamonn T., Clark, Andrew, Debnath, Mukul, Koscica, Rosalyn, Leake, Gerald, Herman, Joshua, Harame, David, Ludewig, Peter, Wan, Yating, Bowers, John E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9562411/
https://www.ncbi.nlm.nih.gov/pubmed/36229447
http://dx.doi.org/10.1038/s41377-022-00982-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9562411/
https://www.ncbi.nlm.nih.gov/pubmed/36229447
http://dx.doi.org/10.1038/s41377-022-00982-7

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