In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10–25 nm) continuous layer of small conical pyramids in which l...

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Detalles Bibliográficos
Autores principales: Rosová, Alica, Dobročka, Edmund, Eliáš, Peter, Hasenöhrl, Stanislav, Kučera, Michal, Gucmann, Filip, Kuzmík, Ján
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565245/
https://www.ncbi.nlm.nih.gov/pubmed/36234625
http://dx.doi.org/10.3390/nano12193496

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565245/
https://www.ncbi.nlm.nih.gov/pubmed/36234625
http://dx.doi.org/10.3390/nano12193496

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