One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Chunlan, Li, Yuqing, Jin, Yebo, Guo, Gangying, Song, Yongle, Huang, Hao, He, Han, Wang, Aolin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565279/
https://www.ncbi.nlm.nih.gov/pubmed/36234608
http://dx.doi.org/10.3390/nano12193481

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565279/
https://www.ncbi.nlm.nih.gov/pubmed/36234608
http://dx.doi.org/10.3390/nano12193481

Ejemplares similares