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One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle...

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Autores principales: Wang, Chunlan, Li, Yuqing, Jin, Yebo, Guo, Gangying, Song, Yongle, Huang, Hao, He, Han, Wang, Aolin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565279/
https://www.ncbi.nlm.nih.gov/pubmed/36234608
http://dx.doi.org/10.3390/nano12193481
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author Wang, Chunlan
Li, Yuqing
Jin, Yebo
Guo, Gangying
Song, Yongle
Huang, Hao
He, Han
Wang, Aolin
author_facet Wang, Chunlan
Li, Yuqing
Jin, Yebo
Guo, Gangying
Song, Yongle
Huang, Hao
He, Han
Wang, Aolin
author_sort Wang, Chunlan
collection PubMed
description Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field of ultra-high resolution optoelectronic display. Here, we report that a-InGaZnO:O TFT prepared at room temperature has high transport performance, manipulating oxygen vacancy (V(O)) defects through an oxygen-doped a-InGaZnO framework. The main electrical properties of a-InGaZnO:O TFTs included high field-effect mobility (µ(FE)) of 28 cm(2)/V s, a threshold voltage (V(th)) of 0.9 V, a subthreshold swing (SS) of 0.9 V/dec, and a current switching ratio (I(on)/I(off)) of 10(7); significant improvements over a-InGaZnO TFTs without oxygen plasma. A possible reason for this is that appropriate oxygen plasma treatment and room temperature preparation technology jointly play a role in improving the electrical performance of a-InGaZnO TFTs, which could not only increase carrier concentration, but also reduce the channel-layer surface defects and interface trap density of a-InGaZnO TFTs. These provides a powerful way to synergistically boost the transport performance of oxide TFTs fabricated at room temperature.
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spelling pubmed-95652792022-10-15 One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature Wang, Chunlan Li, Yuqing Jin, Yebo Guo, Gangying Song, Yongle Huang, Hao He, Han Wang, Aolin Nanomaterials (Basel) Article Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field of ultra-high resolution optoelectronic display. Here, we report that a-InGaZnO:O TFT prepared at room temperature has high transport performance, manipulating oxygen vacancy (V(O)) defects through an oxygen-doped a-InGaZnO framework. The main electrical properties of a-InGaZnO:O TFTs included high field-effect mobility (µ(FE)) of 28 cm(2)/V s, a threshold voltage (V(th)) of 0.9 V, a subthreshold swing (SS) of 0.9 V/dec, and a current switching ratio (I(on)/I(off)) of 10(7); significant improvements over a-InGaZnO TFTs without oxygen plasma. A possible reason for this is that appropriate oxygen plasma treatment and room temperature preparation technology jointly play a role in improving the electrical performance of a-InGaZnO TFTs, which could not only increase carrier concentration, but also reduce the channel-layer surface defects and interface trap density of a-InGaZnO TFTs. These provides a powerful way to synergistically boost the transport performance of oxide TFTs fabricated at room temperature. MDPI 2022-10-05 /pmc/articles/PMC9565279/ /pubmed/36234608 http://dx.doi.org/10.3390/nano12193481 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Chunlan
Li, Yuqing
Jin, Yebo
Guo, Gangying
Song, Yongle
Huang, Hao
He, Han
Wang, Aolin
One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
title One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
title_full One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
title_fullStr One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
title_full_unstemmed One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
title_short One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
title_sort one-step synergistic treatment approach for high performance amorphous ingazno thin-film transistors fabricated at room temperature
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565279/
https://www.ncbi.nlm.nih.gov/pubmed/36234608
http://dx.doi.org/10.3390/nano12193481
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